Electronic Devices I
Units: 1.5, Hours: 3-1.5
Electronic properties of silicon. Charge transport and carrier dynamics. Metal-semiconductor and pn junctions. Diodes. Operation and properties of bipolar and field-effect transistors, including metal-oxide-semiconductor (MOS) structures. Small-signal models and equivalent circuits. Ideal and non-ideal device behaviour. Design considerations with respect to device performance.
Undergraduate course in Electrical Engineering offered by the Department of Electrical and Computer Engineering in the Faculty of Engineering.